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| Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. * Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain -- 15.5 dB Drain Efficiency -- 36% IMD -- - 34 dBc * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain -- 15.5 dB Drain Efficiency -- 15% IM3 @ 10 MHz Offset -- - 47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 49 dBc in 3.84 MHz Channel Bandwidth * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 - 1990 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency-- 16% ACPR @ 885 kHz Offset = - 60 dBc in 30 kHz Bandwidth * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805 - 1880 MHz) Power Gain -- 16 dB Drain Efficiency -- 33% EVM -- 1.3% rms * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S20010NR1 MRF6S20010GNR1 1600 - 2200 MHz, 10 W, 28 V GSM/GSM EDGE SINGLE N - CDMA 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S20010NR1 CASE 1265A - 02, STYLE 1 TO - 270 - 2 GULL PLASTIC MRF6S20010GNR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Unit Vdc Vdc C C (c) Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor 1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78C, 1 W CW Case Temperature 79C, 10 W PEP, Two - Tone Test Symbol RJC Value (1,2) 2.5 5.9 Unit C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 130 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.4 Adc) Dynamic Characteristics(3) Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 0.12 0.02 11.6 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 2 -- 2.2 2.8 0.33 3.5 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz, f2 = 2170.1 MHz, Two - Tone Test Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps D IMD IRL 14 33 -- -- 15.5 36 - 34 - 15 17 -- - 28 -9 dB % dBc dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched on input. (continued) MRF6S20010NR1 MRF6S20010GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW Intermodulation Distortion Adjacent Channel Power Ratio Gps D GF IM3 ACPR -- -- -- -- -- 15.5 15 0.3 - 47 - 49 -- -- -- -- -- dB % dB dBc dBc Typical N - CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., 1930 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS + C11 R2 C1 C7 Z9 C3 Z16 R3 RF INPUT Z1 C2 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z11 Z12 Z13 Z14 C6 Z17 C4 C5 VSUPPLY Z15 RF OUTPUT DUT C8 C9 C10 Z1, Z15 Z2 Z3, Z5 Z4 Z6 Z7 Z8 Z9 0.066 x 0.480 Microstrip 0.066 x 0.765 Microstrip 0.066 x 0.340 x 0.050 Taper 0.340 x 0.295 Microstrip 0.020 x 0.060 Microstrip 0.0905 x 0.280 Microstrip 0.0905 x 0.330 Microstrip 0.050 x 0.980 Microstrip Z10 Z11 Z12 Z13 Z14 Z16, Z17 PCB 0.930 x 0.350 Microstrip 0.930 x 0.400 Microstrip 0.050 x 0.105 Microstrip 0.405 x 0.242 Microstrip 0.066 x 0.740 Microstrip 0.050 x 1.250 Microstrip Taconic RF - 35, 0.030, r = 3.5 Figure 1. MRF6S20010NR1(GNR1) Test Circuit Schematic -- 2110 - 2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values -- 2110 - 2170 MHz Part C1 C2, C6 C3, C7, C8 C4, C5, C9, C10 C11 R1 R2 R3 Description 100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 F, 50 V Chip Capacitors 10 F, 35 V Tantalum Chip Capacitor 1 k Chip Resistor (1206) 10 k Chip Resistor (1206) 10 Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D106K035AS Manufacturer Kemet ATC ATC Murata Kemet MRF6S20010NR1 MRF6S20010GNR1 4 RF Device Data Freescale Semiconductor R2 C1 C11 R1 C7 R3 C3 C4 C5 C2 C6 CUT OUT AREA C9 C8 MRF6S20010N, Rev. 2 C10 Figure 2. MRF6S20010NR1(GNR1) Test Circuit Component Layout -- 2110 - 2170 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS -- 2110 - 2170 MHz D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) IDQ = 65 mA 195 mA -40 162.5 mA 97.5 mA 130 mA 1 -5 40 36 IRL 32 28 24 -30 20 16 2050 Gps 2090 2130 2170 2210 IMD -35 -40 f, FREQUENCY (MHz) VDD = 28 Vdc, Pout = 10 W (PEP) IDQ = 130 mA, 100 kHz Tone Spacing -20 -25 -15 D -10 Figure 3. Two - Tone Wideband Performance @ Pout = 10 Watts (PEP) 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 0.1 1 Pout, OUTPUT POWER (WATTS) PEP 10 30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 195 mA 162.5 mA 130 mA 97.5 mA 65 mA VDD = 28 Vdc, f = 2170 MHz Two -Tone Measurements 100 kHz Tone Spacing -10 VDD = 28 Vdc, f = 2170 MHz Two -Tone Measurements 100 kHz Tone Spacing -20 -30 -50 -60 0.1 10 30 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 VDD = 28 Vdc, IDQ = 130 mA f1 = 2170 MHz, f2 = 2170.1 MHz Two -Tone Measurements IMD, INTERMODULATION DISTORTION (dBc) -10 -30 3rd Order -35 VDD = 28 Vdc, Pout = 10 W (PEP) IDQ = 130 mA, Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 2170 MHz 3rd Order -40 -45 5th Order -50 7th Order -55 0.1 1 10 100 5th Order -60 -70 0.1 7th Order 1 Pout, OUTPUT POWER (WATTS) PEP 10 30 TWO -TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Output Power MRF6S20010NR1 MRF6S20010GNR1 6 Figure 7. Intermodulation Distortion Products versus Tone Spacing RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -- 2110 - 2170 MHz 18 47 Pout, OUTPUT POWER (dBm) P3dB = 41.5 dBm (14.2 W) 45 43 41 39 37 35 20 22 24 26 28 30 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 130 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2170 MHz P1dB = 40.9 dBm (12.26 W) Actual Ideal Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 0.1 VDD = 28 Vdc IDQ = 130 mA f = 2170 MHz TC = -30_C 25_C 85_C D Gps -30_C 25_C 50 85_C 40 30 20 10 0 1 Pout, OUTPUT POWER (WATTS) CW 10 30 70 60 D, DRAIN EFFICIENCY (%) S11 (dB) Figure 8. Pulse CW Output Power versus Input Power 16 15 Gps, POWER GAIN (dB) 14 13 12 11 10 0 3 6 9 12 15 Pout, OUTPUT POWER (WATTS) CW 16 V VDD = 12 V IDQ = 130 mA f = 2170 MHz 18 21 -27 -36 400 24 V 20 V 28 V 32 V S21 (dB) 0 -9 -18 27 18 9 Figure 9. Power Gain and Drain Efficiency versus CW Output Power 6 VDD = 28 Vdc Pout = 10 W (PEP) IDQ = 130 mA S21 3 0 -3 -6 -9 S11 -12 -15 3200 800 1200 1600 2000 2400 2800 f, FREQUENCY (MHz) Figure 10. Power Gain versus Output Power 108 MTTF FACTOR (HOURS x AMPS2) Figure 11. Broadband Frequency Response 107 106 105 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 7 W- CDMA TYPICAL CHARACTERISTICS -- 2110 - 2170 MHz D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -12 -14 -16 -18 -20 VDD = 28 Vdc, IDQ = 130 mA f1 = 2165 MHz, f2 = 2175 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) D 21 14 7 0 0.1 Gps IM3 TC = 25_C ACPR -50 -55 1 Pout, OUTPUT POWER (WATTS) AVG. 10 20 -40 -45 -25 -30 -35 IM3 (dBc), ACPR (dBc) 16 15.8 15.6 Gps, POWER GAIN (dB) 15.4 15.2 15 14.8 14.6 14.4 14.2 14 2060 2080 2100 2120 2140 2160 2180 VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps D 18 17 16 15 14 -45 -47 IM3 -49 ACPR -51 IRL 2200 -53 -55 2220 f, FREQUENCY (MHz) Figure 13. 2 - Carrier W - CDMA Broadband Performance @ Pout = 1 Watt Avg. D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 49 42 35 28 Figure 14. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S20010NR1 MRF6S20010GNR1 8 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25 3.84 MHz Channel BW W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 16. 2-Carrier W-CDMA Spectrum MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 9 N - CDMA TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz R1 VBIAS + C11 R2 C1 C7 Z7 C3 Z17 R3 RF INPUT Z1 C2 Z2 Z3 Z4 Z5 Z6 Z8 Z9 Z10 Z11 Z12 Z13 Z14 C4 C5 VSUPPLY Z15 C6 RF OUTPUT Z16 DUT Z18 C8 C9 C10 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 0.066 0.066 0.354 0.066 0.591 0.050 1.142 1.142 0.433 x 0.480 x 0.728 x 0.512 x 0.079 x 0.335 x 0.980 x 0.350 x 0.516 x 0.276 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17, Z18 PCB 0.244 x 0.423 Microstrip 0.244 x 0.066 x 0.089 Taper 0.066 x 0.182 Microstrip 0.066 x 0.263 Microstrip 0.236 x 0.118 Microstrip 0.066 x 0.099 Microstrip 0.050 x 1.250 Microstrip Taconic RF - 35, 0.030, r = 3.5 Figure 17. MRF6S20010NR1(GNR1) Test Circuit Schematic -- 1930 - 1990 MHz Table 7. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values -- 1930 - 1990 MHz Part C1 C2, C6 C3, C7, C8 C4, C5, C9, C10 C11 R1, R2 R3 Description 100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 F Chip Capacitors (2220) 10 F, 35 V Tantalum Chip Capacitor 10 k Chip Resistors (1206) 10 Chip Resistor (1206) Part Number 1206C104KAT 600B4R7BW 600B9R1BW C5750X5R1H106MT TAJD106K035 Manufacturer AVX ATC ATC TDK AVX MRF6S20010NR1 MRF6S20010GNR1 10 RF Device Data Freescale Semiconductor N - CDMA TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz VDD C11 R1 R2 C1 C4 C7 R3 C3 VGS C5 C2 C6 CUT OUT AREA C8 C9 C10 MRF6S20010N Rev 0 Figure 18. MRF6S20010NR1(GNR1) Test Circuit Component Layout -- 1930 - 1990 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 11 N - CDMA TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz D, DRAIN EFFICIENCY (%) -8 ACPR (dBc) -11 -14 -17 -20 ACPR (dBc) 15.9 15.8 15.7 Gps, POWER GAIN (dB) 15.6 15.5 15.4 15.3 15.2 15.1 ACPR Gps VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 500 mA N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19 18 D 17 16 15 -59 -59.4 -59.8 -60.2 -60.6 15 IRL 14.9 -61 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 19. Single - Carrier N - CDMA Broadband Performance @ Pout = 1 Watt Avg. 50 VDD = 28 Vdc, IDQ = 130 mA f = 1960 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) -40 D, DRAIN EFFICIENCY (%) 40 -45 30 D 20 ACPR 10 -50 -55 -60 0 0.1 -65 1 Pout, OUTPUT POWER (WATTS) AVG. 10 Figure 20. Single - Carrier N - CDMA ACPR and Drain Efficiency versus Output Power MRF6S20010NR1 MRF6S20010GNR1 12 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ 1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . +ALT1 in 12.5 kHz . -ALT1 in 12.5 kHz . . . . Integrated BW . . Integrated BW . . . . . . . . . . . .... . . . ............ ........... ...... .... ........ ..... ... .... . ....... ...... .. .. ....... . .... .... . .. .... ....... ......... ... .. .. ..... ..... ...... .. .. .. ... .. ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... ... . .......... ........... Integrated BW Integrated BW .. ...... ............ . . ...... ... . .. .. ...... ....... ... Figure 21. Single - Carrier CCDF N - CDMA -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 22. Single - Carrier N - CDMA Spectrum MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 13 GSM EDGE TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz R1 VBIAS + C11 R2 C1 C7 Z9 C3 Z17 R3 RF INPUT Z1 C2 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z11 Z12 Z13 Z14 C4 C5 VSUPPLY Z15 C6 Z16 RF OUTPUT DUT Z18 C8 C9 C10 Z1, Z16 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.066 0.066 0.236 0.066 0.551 0.066 0.591 0.591 0.050 x 0.480 x 0.137 x 0.236 x 0.354 x 0.512 x 0.079 x 0.189 x 0.334 x 0.980 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z17, Z18 PCB 1.142 x 0.350 Microstrip 1.142 x 0.516 Microstrip 0.433 x 0.276 Microstrip 0.276 x 0.157 Microstrip 0.236 x 0.433 Microstrip 0.066 x 0.104 Microstrip 0.050 x 1.250 Microstrip Taconic RF - 35, 0.030, r = 3.5 Figure 23. MRF6S20010NR1(GNR1) Test Circuit Schematic -- 1805 - 1880 MHz Table 8. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values --1805 - 1880 MHz Part C1 C2, C6 C3, C7, C8 C4, C5, C9, C10 C11 R1, R2 R3 Description 100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 F Chip Capacitors (2220) 10 F, 35 V Tantalum Chip Capacitor 10 k Chip Resistors (1206) 10 Chip Resistor (1206) Part Number 1206C104KAT 600B4R7BW 600B9R1BW C5750X5R1H106MT TAJD106K035 Manufacturer AVX ATC ATC TDK AVX MRF6S20010NR1 MRF6S20010GNR1 14 RF Device Data Freescale Semiconductor GSM EDGE TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz VDD C11 R1 R2 C1 C4 C7 R3 C3 VGS C5 C2 C6 CUT OUT AREA C8 C9 C10 MRF6S20010N Rev. 0 Figure 24. MRF6S20010NR1(GNR1) Test Circuit Component Layout -- 1805 - 1880 MHz MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 15 GSM EDGE TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz 17 Gps D 15 IRL 14 VDD = 28 Vdc IDQ = 130 mA 13 f, FREQUENCY (MHz) 10 -40 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 20 30 50 0 IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 40 -10 -20 -30 Figure 25. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 4 Watts 6 EVM, ERROR VECTOR MAGNITUDE (% ms) 5 4 3 2 EVM 1 0 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 10 0 D VDD = 28 Vdc IDQ = 130 mA f = 1840 MHz 60 50 40 30 20 Figure 26. Error Vector Magnitude and Drain Efficiency versus Output Power GSM EDGE TEST SIGNAL -50 -55 -60 (dB) SR @ 400 kHz -65 -70 -75 -80 0.1 1 Pout, OUTPUT POWER (WATTS) 10 SR @ 600 kHz VDD = 28 Vdc IDQ = 130 mA f = 1840 MHz -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz SPECTRAL REGROWTH (dBc) Figure 27. Spectral Regrowth at 400 kHz and 600 kHz versus Output Power MRF6S20010NR1 MRF6S20010GNR1 16 Figure 28. EDGE Spectrum RF Device Data Freescale Semiconductor 2170 MHz Zo = 25 VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP f MHz f = 2170 MHz Zload f = 2110 MHz f = 2170 MHz f = 2110 MHz Zsource 2110 2140 2170 Zsource 3.619 + j0.792 Zload 2.544 + j3.068 3.918 + j0.797 2.673 + j3.291 4.087 + j0.558 2.818 + j3.406 Zo = 25 1900 MHz VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg. f MHz Zsource 9.237 + j1.849 Zload 2.770 + j3.497 f = 1990 MHz Zload f = 1930 MHz f = 1930 MHz f = 1990 MHz Zsource 1930 1960 1990 9.521 + j2.144 2.754 + j3.668 9.889 + j2.434 2.772 + j3.833 1800 MHz Zo = 25 VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg. f MHz f = 1880 MHz Zload f = 1805 MHz f = 1880 MHz Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. f = 1805 MHz Zsource 1805 1840 1880 Zsource Zload 13.237 + j5.810 2.445 + j3.698 13.953 + j6.084 2.542 + j3.942 14.858 + j6.279 2.695 + j4.170 Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 29. Series Equivalent Source and Load Impedance MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 17 Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TC = 255C, 50 ohm system) f MHz MH 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 S11 |S11| 0.984 0.986 0.985 0.986 0.982 0.983 0.983 0.979 0.980 0.977 0.978 0.972 0.972 0.963 0.964 0.956 0.948 0.939 0.927 0.910 0.889 0.861 0.821 0.780 0.722 0.666 0.618 0.603 0.614 0.654 0.701 0.747 0.783 0.816 0.842 0.864 0.882 0.894 0.906 0.910 - 178.1 - 179.0 179.9 178.9 177.9 177.2 176.5 175.5 174.8 174.0 173.2 172.4 171.4 170.8 169.9 169.0 167.8 167.0 165.7 164.5 163.2 161.9 160.9 160.1 160.6 162.5 167.0 173.3 179.7 - 175.6 - 173.5 - 172.7 - 172.6 - 172.9 - 173.6 - 174.2 - 175.0 - 175.7 - 176.4 - 176.9 |S21| 1.195 0.947 0.747 0.581 0.446 0.336 0.248 0.188 0.168 0.183 0.223 0.276 0.335 0.396 0.461 0.531 0.604 0.685 0.772 0.869 0.975 1.093 1.221 1.356 1.491 1.606 1.687 1.706 1.673 1.591 1.484 1.364 1.242 1.136 1.042 0.961 0.888 0.822 0.764 0.712 S21 42.42 40.48 39.66 39.89 41.80 46.70 56.02 72.74 96.69 119.3 134.3 142.2 146.4 148.5 148.8 148.2 146.9 144.8 142.2 138.7 134.7 129.7 123.8 116.7 108.3 98.77 88.09 76.98 66.08 55.96 47.04 39.29 32.87 27.69 23.26 19.26 15.75 12.69 9.857 7.587 |S12| 0.001 0.001 0.001 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.004 0.004 0.005 0.005 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.010 0.011 0.012 0.013 0.014 0.014 0.013 0.012 0.011 0.010 0.008 0.006 0.004 0.004 0.005 0.006 0.008 0.009 0.008 S12 - 129.1 - 159.2 147.4 119.1 108.1 102.9 96.99 97.40 94.63 91.92 92.80 89.92 89.90 87.51 89.25 86.98 85.08 82.40 79.69 77.79 75.79 72.86 69.89 63.71 57.70 49.85 41.19 32.65 25.40 20.73 15.11 10.13 6.333 15.63 42.20 57.76 62.56 59.72 49.09 39.24 |S22| 0.875 0.892 0.905 0.913 0.927 0.935 0.941 0.947 0.951 0.955 0.960 0.962 0.966 0.977 0.971 0.977 0.982 0.986 0.988 0.994 0.991 0.993 0.996 0.984 0.985 0.977 0.970 0.958 0.954 0.945 0.947 0.947 0.945 0.944 0.944 0.948 0.948 0.949 0.951 0.955 S22 - 116.3 - 121.6 - 125.9 - 129.9 - 133.4 - 136.4 - 139.5 - 141.9 - 144.4 - 146.6 - 148.6 - 150.5 - 152.2 - 153.7 - 155.2 - 156.8 - 157.9 - 159.5 - 160.7 - 162.1 - 163.4 - 164.7 - 166.0 - 167.4 - 168.5 - 169.6 - 170.8 - 171.3 - 171.9 - 172.3 - 172.6 - 173.0 - 173.6 - 173.9 - 174.2 - 174.6 - 175.2 - 175.7 - 176.1 - 176.5 MRF6S20010NR1 MRF6S20010GNR1 18 RF Device Data Freescale Semiconductor Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TC = 255C, 50 ohm system) (continued) f MHz MH 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 S11 |S11| 0.923 0.927 0.937 0.937 0.942 0.945 0.946 0.950 0.949 0.952 0.950 0.958 0.953 0.957 0.960 - 177.5 - 178.0 - 178.8 - 179.0 - 179.8 - 179.9 179.5 179.3 178.8 178.5 178.4 177.9 177.7 177.2 177.4 |S21| 0.666 0.625 0.591 0.559 0.529 0.504 0.479 0.456 0.436 0.419 0.402 0.387 0.373 0.362 0.350 S21 5.462 3.680 1.864 0.237 - 1.378 - 2.768 - 4.088 - 5.412 - 6.305 - 7.279 - 8.087 - 9.138 - 9.904 - 10.86 - 11.79 |S12| 0.006 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.008 0.009 0.011 0.012 0.013 0.014 0.013 S12 42.56 52.25 60.26 64.14 65.62 64.71 67.58 75.44 82.04 83.60 83.41 81.35 77.45 70.98 67.00 |S22| 0.957 0.962 0.961 0.964 0.964 0.964 0.966 0.966 0.964 0.967 0.968 0.964 0.969 0.970 0.970 S22 - 177.2 - 177.8 - 178.4 - 179.1 - 179.6 179.7 179.4 178.8 178.3 177.9 177.4 176.8 176.4 176.2 175.5 MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 19 PACKAGE DIMENSIONS MRF6S20010NR1 MRF6S20010GNR1 20 RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor 21 MRF6S20010NR1 MRF6S20010GNR1 22 RF Device Data Freescale Semiconductor B E1 E4 2X D3 2X PIN ONE ID L1 GAGE PLANE aaa M CA e D1 L DETAIL Y NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 L L1 b1 c1 e aaa INCHES MIN MAX .078 .082 .001 .004 .077 .088 .416 .424 .378 .382 .290 .320 .016 .024 .316 .324 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .018 .024 .01 BSC .193 .199 .007 .011 2 8 .004 MILLIMETERS MIN MAX 1.98 2.08 0.02 0.10 1.96 2.24 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 8.03 8.23 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 4.90 5.06 0.25 BSC 4.90 5.06 0.18 0.28 2 8 0.10 D aaa M CA b1 2X A1 E bbb M CB A H DETAIL Y A c1 E2 E5 E5 E3 2X A2 D SEATING PLANE PIN 2 D2 PIN 3 RF Device Data Freescale Semiconductor CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC BOTTOM VIEW EXPOSED HEATSINK AREA PIN 1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1265A - 02 ISSUE B TO - 270- 2 GULL PLASTIC MRF6S20010GNR1 MRF6S20010NR1 MRF6S20010GNR1 23 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S20010NR1 MRF6S20010GNR1 Rev. 24 1, 5/2006 Document Number: MRF6S20010N RF Device Data Freescale Semiconductor |
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